| PART |
Description |
Maker |
| KM416V4104B KM416V4004B KM416V4004BSL-45 KM416V400 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000B |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM416C4100B |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM416C1200B KM416V1000B KM416V1200B KM416C1000B SA |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode 100万16的CMOS动态随机存储器的快速页面模
|
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4F171612D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode 100万16的CMOS动态随机存储器的快速页面模
|
Samsung Semiconductor Co., Ltd.
|
| KM416V4100B KM416V4000B KM416V4000BS-6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| V53C16125H V53C16125HK60 V53C16125HT50 |
HIGH PERFORMANCE 128K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM
128K x 16bit high performance fasr page mode CMOS dynamic RAM
|
Mosel Vitelic Corp
Mosel Vitelic, Corp
Mosel Vitelic Corp
|
| V53C16256 V53C16256H V53C16256HK60 |
256K x 16bit fast page mode CMOS dynamic RAM
256K x 16 FAST PAGE MODE CMOS DYNAMIC RAM
|
MOSEL[Mosel Vitelic, Corp]
MOSEL[Mosel Vitelic Corp]
Mosel Vitelic Corp
|
| IC42S16160 IC42S16160-7TIG IC42S16160-6TG IC42S161 |
4M x 16Bit x 4 Banks (256-MBIT) SDRAM
DYNAMIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| GM71V18163C GM71V18163C-5 GM71V18163C-6 GM71V18163 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor
|
